The Shanghai Ding Tai Jiang Xin 12-inch Automotive Grade Power Semiconductor Automated Wafer Manufacturing Center project aims to build China's first 12-inch automotive-grade power semiconductor wafer fab. It is located in the Heavy Equipment Industrial Park of the Lingang New Area in Shanghai. The total investment in the project exceeds 12 billion yuan, covering an area of 198 acres, with a total construction area of approximately 204,000 square meters. Once completed, it will achieve an annual production capacity of approximately 360,000 12-inch power device (POWER MOS) wafers, mainly used for the production of power devices such as MOSFETs. These products can be widely applied in consumer electronics, communications, automotive, medical, industrial, and other electronic product fields. The construction scope includes HVAC systems, clean decoration, water supply and drainage systems, process exhaust systems, process cooling water systems, vacuum systems, fire protection systems, electrical systems, and compressed air systems.